Quantum dot quantum cascade photodetector using a laser structure
We report on a quantum dot quantum cascade detector（QD-QCD）, whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski-Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate...
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| Published in: | Chinese optics letters Vol. 15; no. 10; pp. 85 - 89 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
10-10-2017
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | We report on a quantum dot quantum cascade detector（QD-QCD）, whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski-Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10~8 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected. |
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| Bibliography: | We report on a quantum dot quantum cascade detector（QD-QCD）, whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski-Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10~8 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected. 31-1890/O4 Fengjiao Wang 1, Ning Zhuo 1, Shuman Liu1,2, Fei Ren 1 Shenqiang Zhai 1, Junqi Liu 1,2, Jinchuan Zhang 1 , Fengqi Liu 1,2, and Zhanguo Wang （Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China） |
| ISSN: | 1671-7694 |
| DOI: | 10.3788/COL201715.102301 |