Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
We have proposed a Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for a ferroelectric gate of metal ferroelectric insulator field effect transistor. A memory window of the proposed ferroelectric gate increases as electric field applied to the SrBi2Ta2O9 layer increases, and the memory window of Pt/SrBi2Ta2O9/...
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| Published in: | Applied physics letters Vol. 71; no. 24; pp. 3507 - 3509 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
15-12-1997
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| Online Access: | Get full text |
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| Summary: | We have proposed a Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for a ferroelectric gate of metal ferroelectric insulator field effect transistor. A memory window of the proposed ferroelectric gate increases as electric field applied to the SrBi2Ta2O9 layer increases, and the memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si is relatively greater than that of Pt/SrBi2Ta2O9/SiO2/Si. As a result, the Pt/SrBi2Ta2O9(140 nm)/CeO2(25 nm)/SiO2/Si structure has sufficiently programmable memory windows from 0.9 to 2.5 V in the low gate voltage range of 4–7 V. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.120374 |