Indium Antimonide Based Technology for RF Applications

Indium Antimonide Based Technology for RF Applications

Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so gives the prospect of extremely high frequency operation with very low power dissipation. We report uncooled transistors with cut-off frequency of 340 GHz at a source-drain voltage of 0.5 V, leading...

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Bibliographic Details
Published in:2006 IEEE Compound Semiconductor Integrated Circuit Symposium pp. 121 - 124
Main Authors: Ashley, T., Buckle, L., Emeny, M.T., Fearn, M., Hayes, D.G., Hilton, K.P., Jefferies, R., Martin, T., Phillips, T.J., Powell, J., Tang, A.W.H., Wallis, D., Wilding, P.J.
Format: Conference Proceeding
Language:English
Published: IEEE 01-11-2006
Subjects:
Aluminum
Electron mobility
Etching
FET
FETs
HEMT
Indium
indium antimonide
InSb
Molecular beam epitaxial growth
Radio frequency
Silicon
Tellurium
transistor
Voltage
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Summary:Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so gives the prospect of extremely high frequency operation with very low power dissipation. We report uncooled transistors with cut-off frequency of 340 GHz at a source-drain voltage of 0.5 V, leading towards this goal
ISBN:1424401267
9781424401260
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2006.319918