The volume expansion of the {112̄0} planar defect in 2H–GaN/6H–SiC (0001) Si grown by MBE

• Published in: Thin solid films Vol. 319; no. 1; pp. 153 - 156
• Main Authors: Vermaut, P, Béré, A, Ruterana, P, Nouet, G, Hairie, A, Paumier, E
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 29-04-1998
• Subjects: AlN; Atomistic calculation; Gallium nitrides; GaN; High resolution electron microscopy; MBE; Molecular beam epitaxy; SiC; Stacking fault; Volume expansion; MBE; High resolution electron microscopy; AlN; Gallium nitrides; GaN; Atomistic calculation; Molecular beam epitaxy; Stacking fault; Volume expansion; SiC
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)01112-7

In an attempt to complete the determination of the atomic structure of the {112̄0} planar defects which are found systematically in the interfacial area of (2H) GaN–AlN/6H–SiC, high resolution electron microscopy and atomistic calculations were used and an adequate model was chosen. It is found that the atomic structure corresponds to the ideal 1/2〈11̄01〉{112̄0} stacking fault model, with no volume expansion.