High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points

• Published in: E3S web of conferences Vol. 351; p. 1058
• Main Authors: Diop, A.M., Bennour, A., Mazer, S, El Bekkali, M., Fattah, M., Polleux, J-L., Algani, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Les Ulis EDP Sciences 01-01-2022
• Subjects: Heterojunctions; hpt heterojunction phototransistor; Modelling; Polarization; rof radio-over-fiber; Silicon germanides
• ISSN: 2267-1242; 2555-0403; 2267-1242
• DOI: 10.1051/e3sconf/202235101058

This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to operate at both 2V and 3V, so that we can use the HPT at multiple bias points and reduce costs and allow the reuse of the HPT SiG heterojunction phototransistor on further studies. For a defined point of polarization we will optimize the operation of the HPT so that it flies with the dynamic measurements and we will not base on this HPT by modifying certain values and components so that the HTP works on the other points of polarization.