69.2: New R2PAT Printing Method for Fabricating TFT Electrodes

69.2: New R2PAT Printing Method for Fabricating TFT Electrodes

We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode fabrication. A 900nm resolution and ±1um alignment accuracy has been achieved. A TFT fabricated using this method had demonstrated 33.9 cm2/Vs...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers Vol. 39; no. 1; pp. 1058 - 1061
Main Authors: Tanaka, Masanobu, Ishihara, Hirotsugu, Shimamura, Toshiki, Machida, Akio, Kamei, Takahiro, Ogawa, Masataka
Format: Journal Article
Language:English
Published: Oxford, UK Blackwell Publishing Ltd 01-05-2008
Online Access:Get full text
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Summary:We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode fabrication. A 900nm resolution and ±1um alignment accuracy has been achieved. A TFT fabricated using this method had demonstrated 33.9 cm2/Vs mobility and a 108 Ion/Ioff ratio.
Bibliography:ArticleID:SDTP1789
istex:EAA63D8CB96CCBD41CC24FEC5B4710F45423DE76
ark:/67375/WNG-1BKRDX9S-5
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069316