P-17: Characteristics of Poly-Si TFTs Employing "Counter-Doped Body Tied Source" for Kink Suppression

P-17: Characteristics of Poly-Si TFTs Employing "Counter-Doped Body Tied Source" for Kink Suppression

A new poly‐Si TFTs employing “Counter‐doped Body Tied Source (BTS)” have been proposed and fabricated in order to suppress the kink current. In our experiment, the proposed TFTs employing counter doped BTS show that the kink current due to hole accumulation under high drain electrical field is reduc...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers Vol. 35; no. 1; pp. 284 - 287
Main Authors: Kim, Ji Hoon, Nam, Woo-Jin, Song, In-Hyuk, Park, Jung-Hyun, Han, Min-Koo
Format: Journal Article
Language:English
Published: Oxford, UK Blackwell Publishing Ltd 01-05-2004
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new poly‐Si TFTs employing “Counter‐doped Body Tied Source (BTS)” have been proposed and fabricated in order to suppress the kink current. In our experiment, the proposed TFTs employing counter doped BTS show that the kink current due to hole accumulation under high drain electrical field is reduced considerably. The capability of hole collection improved as the width of counter doped region increase.
Bibliography:istex:C0BAA5BBAA28344F11CEC2F3BF167875072CC674
ark:/67375/WNG-0DKTLSF3-V
ArticleID:SDTP4852
ISSN:0097-966X
2168-0159
DOI:10.1889/1.1833171