High Tilt Angle Ion Implantation into Polycrystalline Si Gates

High Tilt Angle Ion Implantation into Polycrystalline Si Gates

We previously reported about the profiles of ion-implanted B in 400-nm-thick polycrystalline Si (poly-Si) and evaluated the profiles, showing that the channeling phenomenon is significantly suppressed by high-tilt-angle ion implantation. Here, we show that the prominent features of B profiles in pol...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 44; no. 2R; p. 813
Main Authors: Suzuki, Kunihiro, Kataoka, Yuji, Aoyama, Takayuki
Format: Journal Article
Language:English
Published: 01-02-2005
Online Access:Get full text
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Summary:We previously reported about the profiles of ion-implanted B in 400-nm-thick polycrystalline Si (poly-Si) and evaluated the profiles, showing that the channeling phenomenon is significantly suppressed by high-tilt-angle ion implantation. Here, we show that the prominent features of B profiles in poly-Si are the same as those of As and P and established a corresponding database. We also clarified that the significant channeling in poly-Si is related to the channeling in (110)-oriented grains.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.813