Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence

Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence

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Bibliographic Details
Published in:Journal of electronic materials Vol. 21; no. 7; pp. 763 - 767
Main Author: Griscom, David L.
Format: Journal Article
Language:English
Published: 01-07-1992
Online Access:Get full text
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Description
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655608