A theoretical comparison of the 1.3 μm doped InxGa1-xNyAs1-y/GaAs quantum well lasers for different x/y concentrations

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Bibliographic Details
Published in:	Physica. E, Low-dimensional systems & nanostructures Vol. 27; no. 1-2; pp. 253 - 261
Main Authors:	ODUNCUOGLU, M, GÖNÜL, B
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier 01-03-2005
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers; laser diodes Gallium arsenides Transparency Inorganic compounds Ternary compounds Quantum wells Doping Binary compounds 73.21.Fg Indium arsenides 42.60.Mi III-V semiconductors Nitrides 42.55.Px Spontaneous emission Quantum well lasers Carrier density III-V semiconductors
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ISSN:	1386-9477 1873-1759
DOI:	10.1016/j.physe.2004.11.016