An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

• Published in: Applied physics letters Vol. 70; no. 2; pp. 226 - 227
• Main Authors: McCormick, C. S., Weber, C. E., Abelson, J. R., Gates, S. M.
• Format: Journal Article
• Language: English
• Published: 13-01-1997
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.118373

We deposited hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C. We characterize the structural properties of the a-Si:H channel and a- SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using conductivity, capacitance–voltage, and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V s, a Ion/Ioff ratio of 5×105, a subthreshold slope of 0.8 V/decade, and a threshold voltage of 3 V.