Magnetic-resistive random access memories based on diluted Co-TiO2 nanotubes

• Published in: Results in physics Vol. 63; p. 107890
• Main Authors: Jaimes, Kimy S., Quiroz, Heiddy P., Calderón, Jorge A., Dussan, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-08-2024; Elsevier
• Subjects: Ferromagnetic-like behavior; M-RRAM; Memristors; Nanotubes; M-RRAM; Ferromagnetic-like behavior; Memristors; Nanotubes
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2024.107890

•TiO₂ and TiO₂:Co nanotubes were synthesized via electrochemical anodization.•XRD identified anatase phase in all samples, with no binary Co phases detected.•I–V curves presents a SET and RESET processes and switching properties of the TiO2 and TiO2:Co nanotubes.•Stable switching performance of the nanotubes memristors, with minimal fluctuations in LRS compared to HRS.•The incorporation of Co ions into TiO2 nanotubes contributed to magnetic dipole moments.
In this work, we conducted a study of TiO2 and TiO2:Co nanotubes obtained through the electrochemical anodization of Ti and Ti/Co foils. The presence of the anatase phase and amorphous TiO2 was identified and characterized via XRD and FT-IR measurements. It was possible to establish the formation of oxide-diluted magnetic semiconductors without cobalt binary phases. The morphological properties evidenced the formation of nanotubes with an average size of 163.5 ± 10.12 nm. I–V curves presented SET and RESET processes for sweep cycles, indicating switching properties of the nanotubes. The HRS and LRS were identified as a function of the number of cycles by the determined endurance in the nanotubes. The presence of Co ions in the TiO2 nanotubes contributed to the magnetic dipole moments and the observation of ferromagnetic-like behavior.