Generation of terahertz pulsed radiation from photoconductive emitters using 1060 nm laser excitation

• Published in: 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics pp. 196 - 197
• Main Authors: Hinkov, I., Harzendorf, G., Kluska, S., Hinkov, B., Kamaruzaman, K., Beigang, R., Heinrich, J., Hoefling, S., Forchel, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2007
• Subjects: Fiber lasers; Indium gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical fiber cables; Optical pulse generation; Photoconductivity; Rapid thermal annealing; Temperature; X-ray scattering
• ISBN: 1424414385; 9781424414383
• ISSN: 2162-2027
• DOI: 10.1109/ICIMW.2007.4516457

In this paper we report experimental results on the generation of broadband terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3-4 THz, the signal to noise ratio was more than one hundred.