Suppression of a Charge Density Wave in ([SnSe]1.15)1(VSe2)1 Ferecrystals Via Isoelectronic Doping with Ta

• Published in: Journal of electronic materials Vol. 45; no. 10; pp. 4898 - 4902
• Main Authors: Westover, Richard D., Mitchson, Gavin, Hite, Omar K., Hill, Krista, Johnson, David C.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-10-2016
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics; self-assembly; Layered materials; charge density waves; ferecrystal; thin films
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-016-4662-7

The charge density wave (CDW) transition in (SnSe)
1.15
VSe
2
ferecrystals was investigated through the systematic addition of isoelectronic Ta dopants. (SnSe)
1.15
(V
1−
x
Ta
x
)Se
2
ferecrystals with alloyed V
1−
x
Ta
x
Se
2
layers, where
x
 = 0, 0.04, 0.06, 0.07, and 0.09, were prepared from amorphous precursors using the modulated elemental reactants (MER) method. Structural analysis of the ferecrystals, via x-ray diffraction, shows systematic changes in lattice parameters with increasing Ta content consistent with the formation of alloyed V
1−
x
Ta
x
Se
2
layers. Temperature-dependent electrical resistivity and Hall coefficient measurements of the prepared ferecrystals reveal that both the magnitude and onset temperature of the CDW transition are decreased with the addition of Ta, indicating that the ferecrystal CDW transition, although notably stable␣to volume defects produced by non-stoichiometric films, is more susceptible to destabilization with the addition of isoelectronic dopants.