X-Ray Photoelectron and Rutherford Backscattering Spectroscopy of Silicon Hyperdoped with Selenium

• Published in: Journal of applied spectroscopy Vol. 91; no. 3; pp. 586 - 592
• Main Authors: Komarov, F. F., Wang, Ting, Vlasukova, L. A., Parkhomenko, I. N., Milchanin, O. V.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-07-2024; Springer Nature B.V
• Subjects: Analytical Chemistry; Atomic/Molecular Structure and Spectra; Backscattering; Laser beam annealing; Lattice sites; Photoelectrons; Physics; Physics and Astronomy; Pulsed lasers; Rutherford backscattering spectroscopy; Selenium; Silicon; X ray photoelectron spectroscopy; surface passivation; silicon; high-fluence Se ion implantation; x-ray photoelectron spectroscopy; elemental and chemical analysis of subsurface region; laser annealing
• ISSN: 0021-9037; 1573-8647
• DOI: 10.1007/s10812-024-01758-0

The possibility of surface passivation of silicon by hyperdoping with Se and laser annealing was evaluated by x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy. Silicon layers hyperdoped with Se were formed by Si implantation (140 keV, 6.1∙10
15
cm
–2
) followed by pulsed laser annealing (PLA) (λ = 694 nm,
W
= 2.0 J/cm
2
, τ = 70 ns). The Se concentration in the subsurface region (2.0–2.5 nm) was 0.67% (3.35∙10
20
cm
–3
). The high Se concentration could be attributed to its accumulation in the subsurface region during PLA to form Si–Se bonds. According to XPS, Se–O bonds did not form in the subsurface implanted layer during PLA. The chosen laser pulse energy density of
W
= 2 J/cm
2
allowed high structural perfection (>91%) to be achieved and a high Se concentration (>69%) at the Si lattice sites to be attained.