Meaning of the photovoltaic band gap for amorphous semiconductors

Meaning of the photovoltaic band gap for amorphous semiconductors

We introduce the concept of a photovoltaic band gap Epvg for amorphous solar cells. This is the minimum photon energy thermodynamically required for the generation, of two free carriers in an operating solar cell. For hydrogenated amorphous silicon the photovoltaic band gap is 1.57 eV at 1-sun illum...

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Bibliographic Details
Published in:Applied physics letters Vol. 41; no. 10; pp. 953 - 955
Main Authors: Yablonovitch, E., Tiedje, T., Witzke, H.
Format: Journal Article
Language:English
Published: 15-11-1982
Online Access:Get full text
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Summary:We introduce the concept of a photovoltaic band gap Epvg for amorphous solar cells. This is the minimum photon energy thermodynamically required for the generation, of two free carriers in an operating solar cell. For hydrogenated amorphous silicon the photovoltaic band gap is 1.57 eV at 1-sun illumination.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93353