Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution

• Published in: Optics and spectroscopy Vol. 132; no. 2; pp. 158 - 161
• Main Authors: Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. S., Matveev, B. A., Remennyy, M. A., Usikova, A. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-02-2024; Springer Nature B.V
• Subjects: Current density; Dark current; Infrared detectors; Lasers; Optical Devices; Optics; Photometers; Photonics; Photosensitivity; Physics; Physics and Astronomy; Room temperature; Solid solutions; InAsSb solid solutions; A; B; semiconductors; photodiodes; long-wavelength photodetectors
• ISSN: 0030-400X; 1562-6911
• DOI: 10.1134/S0030400X24020115

Photodetectors based on diode heterostracture with InAsSb
x
photosensitive region (
x
= 0.38) with long-wave cut-off λ
0.1
about 10 μm (296 K) are investigated. The dependences of dark current density and detectivity in the temperature range of 200–425 K have been investigated. It is shown that the experimental samples are characterized by values of dark current density about 500 A/cm
2
at room temperature, detectivity 1.2 × 10
9
and 5 × 10
9
cm Hz
1/2
W
–1
at room temperature and 250 K, respectively, and diffusion mechanism of current flow in the temperature range 200–350 K.