High-Frequency Transistor Evaluation by Three-Port Scattering Parameters (Correspondence)

High-Frequency Transistor Evaluation by Three-Port Scattering Parameters (Correspondence)

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques Vol. 15; no. 4; pp. 263 - 265
Main Author: Anderson, A.P.
Format: Journal Article
Language:English
Published: IEEE 01-04-1967
Subjects:
Band pass filters
Bandwidth
Couplings
Fasteners
Frequency
Insertion loss
Microwave devices
Microwave transistors
Resonator filters
Scattering parameters
Online Access:Get full text
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Description
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1967.1126439