Sol-gel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 ≤ x ≤ 1) phosphor films

Sol-gel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0 ≤ x ≤ 1) phosphor films

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Vol. 80; no. 7; pp. 1547 - 1552
Main Authors: HAN, X. M, LINE, J, PANG, M. L, YU, M, WANG, S. B
Format: Journal Article
Language:English
Published: Berlin Springer 01-04-2005
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other solid inorganic materials
Photoluminescence
Physics
Inorganic compounds
Doping
Photoluminescence
Gadolinium Tungstates
Energy-level transitions
Impurities
Yttrium Tungstates
Rare earth additions
Chemical composition
Dip coating
Microstructure
Silicon Tungstates
Sol-gel process
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Description
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-004-2506-4