Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition

A series of 150-nm-thick Al-doped ZnO (AZO) thin films with various Al doping concentrations were deposited by atomic layer deposition technique to determine their applicability in transparent electronic devices. For incorporation into transparent electrodes, the electrical properties of AZO films m...

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Bibliographic Details
Published in:	Ceramics international Vol. 50; no. 22; pp. 48843 - 48848
Main Authors:	Choi, Ji Woon, Ryu, Jin Joo, Song, Wooseok, Kim, Gun Hwan, Chung, Taek-Mo
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 15-11-2024
Subjects:	Al-doped ZnO Atomic layer deposition Schottky contact Transparent conducting oxide Work function Work function Schottky contact Atomic layer deposition Al-doped ZnO Transparent conducting oxide
Online Access:	Get full text
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Summary:	A series of 150-nm-thick Al-doped ZnO (AZO) thin films with various Al doping concentrations were deposited by atomic layer deposition technique to determine their applicability in transparent electronic devices. For incorporation into transparent electrodes, the electrical properties of AZO films must be modulated to minimize the parasitic effect. The results show that AZO thin films with various Al dopant concentrations had different work-functions and electrical contact properties, while the other physical characteristics were not significantly changed. Hence, AZO thin films can be used as transparent conducting oxide materials and are potential alternatives for the currently used indium-tin-oxide (ITO) thin films.
ISSN:	0272-8842
DOI:	10.1016/j.ceramint.2024.09.132