Band offsets and electron localization in semiconductor interfaces and superlattices

Band offsets and electron localization in semiconductor interfaces and superlattices

The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We show that the valence‐band discontinuity can be extracted from a knowledge of the local density of states across the interface. This method can also be used to determine the band offsets in superlatt...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 8; no. 4; pp. 916 - 919
Main Authors: Matthai, C. C., Bass, J. M, Oloumi, M.
Format: Journal Article
Language:English
Published: 01-07-1990
Subjects:
BAND THEORY CALCULATIONS
LOCALIZED STATES
SUPERLATTICES
InAs
Si
VALENCE BANDS
GaSb
SEMICONDUCTOR JUNCTIONS
BAND STRUCTURE
Ge
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Summary:The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We show that the valence‐band discontinuity can be extracted from a knowledge of the local density of states across the interface. This method can also be used to determine the band offsets in superlattice structures. The concept of band offsets in short period superlattices is examined. It is shown that this is intimately connected with the localization of bands in one or other of the superlattice constituents.
ISSN:0734-211X
1520-8567
2327-9877
DOI:10.1116/1.584942