Effect of the Nickel and Temperature on the Electrical Properties of C-SiO2-Ni Nanocomposites

The sol–gel method was chosen to synthesize C-SiO 2 /Ni nanocomposites. Silica nano-fillers were incorporated into a carbon based on resorcinol–formaldehyde (RF), doped with 5% by mass of atomic nickel. During the preparation process, they were subjected to a heat treatment of different pyrolysis te...

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Bibliographic Details
Published in:Brazilian journal of physics Vol. 52; no. 4
Main Authors: Gouadria, S., Omri, K., Choukaier, Dhouha
Format: Journal Article
Language:English
Published: New York Springer US 01-08-2022
Springer Nature B.V
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Summary:The sol–gel method was chosen to synthesize C-SiO 2 /Ni nanocomposites. Silica nano-fillers were incorporated into a carbon based on resorcinol–formaldehyde (RF), doped with 5% by mass of atomic nickel. During the preparation process, they were subjected to a heat treatment of different pyrolysis temperatures and under an inert atmosphere for 2 h. The X- ray diffractogram presented by XRD of the samples, treated at low temperatures, indicated the presence of characteristic lines of metallic nickel. FTIR analysis showed the presence of a main band located at about 1050 cm −1 , which corresponded to the vibrations of Si–O-Si. From electrical characterizations, the C-SiO 2 -Ni5%-650 sample has a negative differential resistance behavior (NDR) at low measurement temperatures. According to the I-V characterization, the C-SiO 2 -Ni 5% -625 °C nanocomposite revealed the NDR behavior at room temperature. The conduction mechanism was fitted by two models: the hopping conduction model for the nanocomposite, treated at 650 °C, and the small polaron model for the composite treated at 675 °C.
ISSN:0103-9733
1678-4448
DOI:10.1007/s13538-022-01140-5