Heavy ion testing at the galactic cosmic ray energy peak

A 1 GeV/u 56 Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.

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Bibliographic Details
Published in:	2009 European Conference on Radiation and Its Effects on Components and Systems pp. 559 - 562
Main Authors:	Pellish, J. A., Xapsos, M. A., LaBel, K. A., Marshall, P. W., Heidel, D. F., Rodbell, K. P., Hakey, M. C., Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., Baumann, R. C., Deng, X., Marshall, A., Sierawski, B. D., Black, J. D., Reed, R. A., Schrimpf, R. D., Kim, H. S., Berg, M. D., Campola, M. J., Friendlich, M. R., Perez, C. E., Phan, A. M., Seidleck, C. M.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-09-2009
Subjects:	CMOS integrated circuits Field programmable gate arrays Laboratories NASA Radiation effects Random access memory
Online Access:	Get full text
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Description
Summary:	A 1 GeV/u 56 Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.
ISBN:	1457704927 9781457704925
ISSN:	0379-6566
DOI:	10.1109/RADECS.2009.5994714