Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect

• Published in: Russian microelectronics Vol. 49; no. 2; pp. 132 - 138
• Main Authors: Vasil’ev, D. V., Kostyuk, D. V., Orlov, E. P., Zhukov, D. A., Kazakov, Yu. V., Amelichev, V. V., Belyakov, P. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-03-2020; Springer Nature B.V
• Subjects: Converters; Electrical Engineering; Engineering; Linearity; Magnetic fields; Magnetism; Magnetoresistance; Magnetoresistivity; Nanostructure; Sensitivity; Transducers; spin-tunnel magnetoresistive effect; magnetic field converters; Wheatstone bridge circuit; hysteresis
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739720010138

The modern designs of magnetic field transducers (MFTs) based on nanostructures with the spin-tunnel magnetoresistive effect (STMR) and the main areas of their application are considered. The results of an experimental study of two constructive versions of magnetic field transducers with an even and odd output characteristic are presented. The sensitivity of the fabricated MFT model based on the STMR effect with an even output characteristic is 0.54 mV/(V Oe) in the range of a magnetic field with the intensity ranging from 0 to 40 Oe. The results of dependency conversion are presented.
R
(
H
) nanostructures with the STMR effect by thermomagnetic treatment to reduce hysteresis and increase linearity in the working range of the magnetic field. The sensitivity of the fabricated MFT model based on the STMR effect with an odd output characteristic is 5.4 mV/(V Oe) in the range of a magnetic field with a strength of ±1 Oe. In conclusion, promising directions of the development of magnetic field converter (MFC) structures based on nanostructures with the STMR effect are described.