Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

• Published in: Journal of communications technology & electronics Vol. 66; no. 9; pp. 1096 - 1102
• Main Authors: Vaganova, P. A., Iakovleva, N. I.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-09-2021; Springer Nature B.V
• Subjects: Barrier layers; Communications Engineering; Conduction bands; Dark current; Depletion; Engineering; Heterostructures; Infrared radiation; Networks; Operating temperature; Radiation; Valence band; B; barrier; dark current; MWIR; InAsSb; focal plane array (FPA); structure
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226921090175

—
In the study, a new
р
B
n
-architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of III‒V group materials with an
n
-type AlAsSb barrier layer, an
n
-type InAsSb absorption layer, and a
р
-type GaAsSb collector layer, designed for detection of radiation in the mid-wavelength infrared range of 3.1–4.2 µm has been developed and investigated. The proposed structure has no valence band offset, which enables operation in a wide bias voltage range without depletion of the base
n
-type InAsSb active layer. The barrier in the conduction band, due to the presence of a wide-gap AlAsSb layer in the structure, is ∼1.0 eV, which is sufficient to eliminate the electron current component. The dark currents and performance of the
р
B
n
-structure have been analyzed, with the result that, at an operating temperature of
Т
≈ 150 K and dark current density of
J
≤ 6 × 10
–10
A/cm
2
, the detectivity value reaches
D
* ≥ 2.5 × 10
12
(cm W
–1
Hz
1/2
).