Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

• Published in: Bulletin of the Russian Academy of Sciences. Physics Vol. 72; no. 7; pp. 941 - 943
• Main Authors: Avakyants, L. P., Bokov, P. Yu, Grigoriev, A. T., Chervyakov, A. V.
• Format: Journal Article
• Language: English
• Published: Heidelberg Allerton Press, Inc 01-07-2008; Springer Nature B.V
• Subjects: Gallium arsenide; Hadrons; Heavy Ions; Nuclear Physics; Physics; Physics and Astronomy; Plasma etching; Proceedings of the XVIII International Conference “Interaction of Ions with Surface”; Spectrum analysis; Substrates; Defect Density; GaAs Substrate; GaAs; Electron Cyclotron Resonance; GaAs Wafer
• ISSN: 1062-8738; 1934-9432
• DOI: 10.3103/S1062873808070162

Semi-insulating GaAs(100) substrates subjected to ion plasma etching in different regimes have been investigated by photoreflectance spectroscopy. The photoreflectance spectra of the processed samples exhibit Franz-Keldysh oscillations, which indicate a decrease in the defect density in the surface region. On the basis of the experimental data and the results of simulation of the photoreflectance spectra, optimal regimes of sample etching have been found.