Impact of dangling bonds on the surface of silicon nanocrystals doped with shallow donors upon radiative interband transitions

It is found that the radiative recombination rate rises when silicon nanocrystals are doped with donors. This rise turns out to be stronger when a nanocrystal surface contains abundant defects capable of capturing electrons emitted by donors.

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Bibliographic Details
Published in:	Bulletin of the Russian Academy of Sciences. Physics Vol. 75; no. 8; pp. 1070 - 1072
Main Authors:	Belyakov, V. A., Konakov, A. A., Kurova, N. V., Sidorenko, K. V., Burdov, V. A.
Format:	Journal Article
Language:	English
Published:	Heidelberg Allerton Press, Inc 01-08-2011 Springer Nature B.V
Subjects:	Defects Hadrons Heavy Ions Nanocrystals Nuclear Physics Oma-13 Physics Physics and Astronomy Radiative recombination Silicon Interband Transition Dangling Bond Shallow Donor Silicon Nanocrystals Auger Recombination
Online Access:	Get full text
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Description
Summary:	It is found that the radiative recombination rate rises when silicon nanocrystals are doped with donors. This rise turns out to be stronger when a nanocrystal surface contains abundant defects capable of capturing electrons emitted by donors.
ISSN:	1062-8738 1934-9432
DOI:	10.3103/S1062873811080090