Reactive sputtering of AlScN thin Ulms with variable Sc content on 200 mm wafers

Sc-doped AlN polycrystalline films are attractive active layers for high frequency (GHz range) acoustic resonators owing to the significant enlargement of the AlN piezoelectric activity with the increasing Sc content. To sputter homogenously doped AlScN films on 200 mm Si wafers we use a configurabl...

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Bibliographic Details
Published in:	2018 European Frequency and Time Forum (EFTF) pp. 13 - 16
Main Authors:	Clement, Marta, Felmetsger, Valeriy, Mirea, Teona, Iborra, Enrique
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-04-2018
Subjects:	200 mm silicon sustrates Absorption AlScN films Aluminum nitride III-V semiconductor materials Resonators Sputtering Substrates variation of Sc content
Online Access:	Get full text
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Summary:	Sc-doped AlN polycrystalline films are attractive active layers for high frequency (GHz range) acoustic resonators owing to the significant enlargement of the AlN piezoelectric activity with the increasing Sc content. To sputter homogenously doped AlScN films on 200 mm Si wafers we use a configurable cathode containing a variable number of embedded Sc pellets to fine tuning the Sc content in the films. The method was implemented in an Endeavor-AT™ cluster tool from OEM Group, adapted for sputtering on 200 mm wafers. 1 μm thick AlScN films with uniform Sc content (around 7 at.%), high crystal quality and good piezoelectric response have been sputtered over 200 mm production-level wafers.
DOI:	10.1109/EFTF.2018.8408987