Interfacial Engineering by Indium-Doped CdS for High Efficiency Solution Processed Sb 2 (S 1- x Se x ) 3 Solar Cells

• Published in: ACS applied materials & interfaces Vol. 11; no. 3; pp. 3207 - 3213
• Main Authors: Wu, Chunyan, Jiang, Chenhui, Wang, Xiaomin, Ding, Honghe, Ju, Huanxin, Zhang, Lijian, Chen, Tao, Zhu, Changfei
• Format: Journal Article
• Language: English
• Published: United States 23-01-2019
• Subjects: antimony selenosulfide; electron transport material; Sb2(S1−xSex)3; In-doped CdS; thin film; antimony sulfide−selenide; solar cell; interface engineering
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b18330

Sb
(S
Se
)
alloy material is a kind of encouraging material for realistically apposite solar cell because it benefits from high absorption coefficient, suitable bandgap, superior stability, and plentiful elemental storage. Interfacial engineering is vital for effective charge carrier transport in solar cells, which could upgrade the photoelectric conversion efficiency (PCE). Herein, as an interlayer, indium-doped CdS thin film fabricated by chemical bath deposition is found to remarkably enhance the photovoltaic performance of Sb
(S
Se
)
solar cells. Mechanistic investigations show that the interlayer can both optically and electrically optimize the device quality. With that a PCE of 6.63% is obtained, which is the highest efficiency among the planar heterojunction solar cells and slightly higher than the reported record efficiency of mesoscopic Sb
(S
Se
)
-sensitized solar cells. This research provides an efficient interfacial engineering for high performance Sb
(S
Se
)
solar cells.