Analytical Physics-Based Compact Current-Voltage Model for 2D-2D Resonant Tunneling Diodes

• Published in: IEEE transactions on nanotechnology Vol. 21; pp. 752 - 762
• Main Authors: Celino, Daniel R., Ragi, Regiane, Romero, Murilo A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 2D-2D resonant tunneling; analytical modeling; Analytical models; Circuits; Computational modeling; Electric fields; Electric potential; Emitters; Integrated circuit modeling; Mathematical analysis; Mathematical models; Numerical models; physics-based compact model; Resonant tunneling; resonant tunneling diode; RTD; Space charge; Tunnel diodes; Two dimensional models; Voltage
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2022.3223019

In this paper, we develop an analytical model for the resonant current-voltage ( I-V ) characteristics of 2D-2D Resonant Tunneling Diodes. Starting from the Tsu-Esaki formalism, we consider the overall electrical potential distribution in the device layer structure, including the quantized space charge region in the emitter layer. Additionally, to obtain a more realistic model, we also take into account the scattering experienced by electrons during tunneling process through the double barrier region. These additional features greatly improve the accuracy of the proposed model when compared with others approaches reported in the literature. The device model is fully physics-based, allowing the computation of the I-V curve accordingly to the geometry and device structure of the RTD. The model is fully analytical and explicit, thereby well suited for circuit simulator environment. The model is validated against experimental data from distinct RTDs structures, providing excellent agreement.