Fabrication of rectangular holes along 2×4 unit cells on GaAs(001) reconstructed surface with a scanning tunneling microscope
The modification of GaAs (001)-(2×4) reconstructed surface with a scanning tunneling microscope is studied. By applying a high bias voltage pulse between the sample and tip, surface atoms can be extracted and nanometer-scale rectangular “holes” can be made. The sides of the rectangles are along the...
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Published in: | Japanese Journal of Applied Physics Vol. 34; no. 6B; pp. L727 - L729 |
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Main Authors: | , , , |
Format: | Journal Article |
Language: | English |
Published: |
Tokyo
Japanese journal of applied physics
01-06-1995
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Subjects: | |
Online Access: | Get full text |
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Summary: | The modification of GaAs (001)-(2×4) reconstructed surface with a scanning tunneling microscope is studied. By applying a high bias voltage pulse between the sample and tip, surface atoms can be extracted and nanometer-scale rectangular “holes” can be made. The sides of the rectangles are along the [110] and the [11̄0] directions, reflecting a surface reconstructed structure. It is considered that isolated As dimers in (2×4) unit cells and unit cells with empty adjacent unit cells are energetically unstable. The reconstructed surface will be useful in the fabrication of nanometer-scale patterns. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.34.l727 |