Fabrication of rectangular holes along 2×4 unit cells on GaAs(001) reconstructed surface with a scanning tunneling microscope

The modification of GaAs (001)-(2×4) reconstructed surface with a scanning tunneling microscope is studied. By applying a high bias voltage pulse between the sample and tip, surface atoms can be extracted and nanometer-scale rectangular “holes” can be made. The sides of the rectangles are along the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 34; no. 6B; pp. L727 - L729
Main Authors: SUGIYAMA, H, SHINOHARA, M, TANIMOTO, M, INOUE, N
Format: Journal Article
Language:English
Published: Tokyo Japanese journal of applied physics 01-06-1995
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Summary:The modification of GaAs (001)-(2×4) reconstructed surface with a scanning tunneling microscope is studied. By applying a high bias voltage pulse between the sample and tip, surface atoms can be extracted and nanometer-scale rectangular “holes” can be made. The sides of the rectangles are along the [110] and the [11̄0] directions, reflecting a surface reconstructed structure. It is considered that isolated As dimers in (2×4) unit cells and unit cells with empty adjacent unit cells are energetically unstable. The reconstructed surface will be useful in the fabrication of nanometer-scale patterns.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.l727