The effect of rear earth doping CdS nanostructure on structural, optical and photoconductivity properties

• Published in: Iraqi journal of physics Vol. 17; no. 40; pp. 108 - 118
• Main Author: Ibrahim, Isam M.
• Format: Journal Article
• Language: English
• Published: University of Baghdad 01-03-2019
• Subjects: Rear earth, CdS nanostructure, structural, optical and photoconductivity properties
• ISSN: 2070-4003; 2664-5548
• DOI: 10.30723/ijp.v17i40.411

Rare earth elements (Cerium, Lanthanum and Neodymium) doped CdS thin films are prepared using the chemical Spray Pyrolysis Method with temperature 200 oC. The X-ray diffraction (XRD) analysis refers that pure CdS and CdS:Ce, CdS:La and CdS:Nd thin films showed the hexagonal crystalline phase. The crystallite size determined by the Debye-Scherrer equation and the range was (35.8– 23.76 nm), and it was confirmed by field emission scanning electron microscopy (FE-SEM). The pure and doped CdS shows a direct band gap (2.57 to 2.72 eV), which was obtained by transmittance. The room-temperature photoluminescence of pure and doped CdS shows large peak at 431 nm, and two small peaks at (530 and 610 nm). The Current – voltage measurement in dark and illumination (100 mW/cm2, 183 mW/cm2 and 288 mW/cm2) condition. The photocurrent increases and the resistivity decreases with the light intensity increases. So film reveals photoconductivity phenomena suggesting it's useful for optoelectronic applications.