The electrical properties of HgCdTe layers grown by MBE on Si and P + / n junction formed on its basis

• Published in: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) pp. 1 - 2
• Main Authors: Guzev, A. A., Kovchavtcev, A. P., Tsarenko, A. V., Yakushev, M. V., Varavin, V. S., Vasilyev, V. V., Dvoretsky, S. A., Marin, D. V., Sabinina, I. V., Shefer, D. A., Sidorov, G. Yu, Sidorov, Yu G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2016
• Subjects: Annealing; Cadmium compounds; dark current; doping; heterostructure; HgCdTe (MCT); high operating temperature; II-VI semiconductor materials; infrared detector; Molecular beam epitaxial growth; molecular-beam epitaxy (MBE); p-on-n photodiode; Silicon; Substrates; Temperature dependence
• DOI: 10.1109/ICIPRM.2016.7528590

We studied the electrical properties of undoped and indium-doped and arsenic-doped Cd X Hg 1-X Te layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p +- n junctions fabricated in Cd 0.3 Hg 0.7 Te heterostuctures grown by MBE on Si substrates has been studied.