Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire

Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire

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Bibliographic Details
Published in:Journal of electronic materials Vol. 16; no. 5; pp. 315 - 321
Main Authors: GOLECKI, I, KROKO, L, GLASS, H. L
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-09-1987
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrate
Buried layer
Microelectronic fabrication
Ion implantation
Silicon Carbides
Silicon
Carbon
Silicon on sapphire technology
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Description
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02657905