Switching the electrical properties of thin-film memristive elements based on GeTe by sequences of ultrashort laser pulses

• Published in: Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki Vol. 23; no. 5; pp. 911 - 919
• Main Authors: Eliseev, N.N., Nevzorov, A.A., Mikhalevsky, V.A., Kiselev, A.V., Burtsev, A.A., Ionin, V.V., Lotin, A.A.
• Format: Journal Article
• Language: English
• Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 01-10-2023
• Subjects: germanium telluride; memristors; neuromorphic elements; optoelectronic memristors; phase-change materials; phase-change memory; thin films
• ISSN: 2226-1494; 2500-0373
• DOI: 10.17586/2226-1494-2023-23-5-911-919

The work is devoted to the study of the characteristics of the state control of a thin-film element based on a phase-change GeTe material. The properties of such an element have been controlled by the action of sequences of ultrashort laser pulses. This action leads to a rapid heating of the thin film element and provides a phase transition between states with a resistance different by several orders of magnitude. The dynamics of the resistance was studied using a high speed oscilloscope according to the scheme where the element under study was the voltage divider arm of a highly stable source. Three different types of conductivity switching were observed for 100 nm thin films. For low energy laser radiation, several distinct states were obtained in which the material film has predominantly semiconducting properties. As the energy of the optical pulses increases, the number of possible stable states determined by the specific conductivity of the material decreases to two, one of which (low resistance) is exclusively metallic properties. In all cases, the time taken to switch to a stable state does not exceed a few tens of nanoseconds for films up to 100 nm thick. The study has demonstrated that the structures described can be used to implement optically controlled memristive elements. In addition, the large number of possible allowable specific resistances of the element will make it possible to use it to increase the information capacity of memory cells based on phase-change materials or to implement optoelectronic neuromorphic systems.