A Full Ka-Band GaN-on-Si Low-Noise Amplifier

In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compre...

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Bibliographic Details
Published in:	2020 50th European Microwave Conference (EuMC) pp. 1015 - 1018
Main Authors:	Parveg, Dristy, Varonen, Mikko, Kantanen, Mikko
Format:	Conference Proceeding
Language:	English
Published:	EuMA 12-01-2021
Subjects:	Gain Gallium nitride HEMTs linearity Low-noise amplifiers MMICs Silicon Substrates Wideband
Online Access:	Get full text
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Summary:	In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.
DOI:	10.23919/EuMC48046.2021.9337964