500 °C Microtesla Sensitive Magnetic Field Sensing Using a 4H-SiC PIN Diode

• Published in: IEEE sensors journal Vol. 24; no. 19; pp. 29884 - 29889
• Main Authors: Okeil, Hesham, Wachutka, Gerhard
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 4H-SiC pin diode; harsh environment electronics; magnetic field sensors; Magnetic fields; Magnetic semiconductors; Magnetic sensors; Noise sensitivity; PIN diodes; Sensitivity; Sensitivity analysis; Sensors; Silicon carbide; Temperature measurement; Temperature sensors
• ISSN: 1530-437X; 1558-1748
• DOI: 10.1109/JSEN.2024.3440256

Wide bandgap (WBG) semiconductors possess a large potential for the development of sensors operating in harsh environments. In this article, we present an in-depth investigation of the magnetic field sensing capabilities of a 4H-SiC-based lateral pin diode up to a temperature of <inline-formula> <tex-math notation="LaTeX">500~^{\circ } </tex-math></inline-formula> C. We characterize the diode in terms of magnetic field sensitivity, linearity, stability, and current noise. By combining the sensitivity and noise measurements, we finally evaluate the magnetic field detectivity. The results reflect the potential of the diode for magnetic field sensing in harsh environments as well as for electric current sensing applications in SiC power modules.