High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V

High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V

Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10–20 Ω at 100 mA current. Upper ambient tem...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Vol. 29; no. 1; pp. 190 - 193
Main Authors: Andreev, A.N., Anikin, M.M., Zelenin, V.V., Ivanov, P.A., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Strel'chuk, A.M., Syrkin, A.L., Chelnokov, V.E.
Format: Journal Article
Language:English
Published: Elsevier B.V 1995
Subjects:
Semiconductor devices
Silicon carbide
Semiconductor devices
Silicon carbide
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Summary:Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10–20 Ω at 100 mA current. Upper ambient temperature was 300 °C.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)04050-E