Facet evolution of selectively grown epitaxial Si1−Ge fin layers in sub-100 nm trench arrays

Facet evolution of selectively grown epitaxial Si1−Ge fin layers in sub-100 nm trench arrays

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Bibliographic Details
Published in:Journal of crystal growth Vol. 532; p. 125429
Main Authors: Jang, Hyunchul, Koo, Sangmo, Byeon, Dae-Seop, Choi, Yongjoon, Ko, Dae-Hong
Format: Journal Article
Language:English
Japanese
Published: 01-02-2020
Online Access:Get full text
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Description
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2019.125429