Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2: New precursors for chemical vapor deposition processes

• Published in: Inorganic materials Vol. 49; no. 4; pp. 363 - 367
• Main Authors: Sysoev, S. V., Nikulina, L. D., Ermakova, E. N., Kosinova, M. L., Rakhlin, V. I., Tsyrendorzhieva, I. P., Lis, A. V., Voronkov, M. G.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-04-2013
• Subjects: Chemical vapor deposition; Chemistry; Chemistry and Materials Science; Industrial Chemistry/Chemical Engineering; Infrared radiation; Inorganic Chemistry; Materials Science; Mathematical analysis; Organosilicon compounds; Precursors; Spectroscopy; Vapor pressure; Vaporization; Saturated Vapor Pressure; Organosilicon Compound; Glass Phys; Chemical Vapor Deposition Process; Vapor Pressure Measurement
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168513040171

We have synthesized the germanium- and tin-containing organosilicon compounds Et
3
GeN(SiMe
3
)
2
and Et
3
SnN(SiMe
3
)
2
as new precursors for the preparation of materials by chemical vapor deposition. The compounds were characterized by NMR, IR and UV spectroscopies and thermal analysis. Using vapor pressure measurements, we obtained temperature dependences of their saturated vapor pressure. We assessed their thermal stability and calculated the thermodynamic characteristics of vaporization of the organosilicon compounds.