L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Saved in:
Bibliographic Details
Published in:International journal of RF and microwave computer-aided engineering Vol. 32; no. 10
Main Authors: Angamuthu, Revathy, ChettiaGoundar Sengodan, Boopathi, Anandan, Mohanbabu, Varghese, Arathy, Vakkalakula, Bharath Sreenivasulu
Format: Journal Article
Language:English
Published: 01-10-2022
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:1096-4290
1099-047X
DOI:10.1002/mmce.23308