Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate

• Published in: Applied physics letters Vol. 84; no. 2; pp. 263 - 265
• Main Authors: Qiu, Yueming, Uhl, David, Keo, Sam
• Format: Journal Article
• Language: English
• Published: 12-01-2004
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1640467

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm2. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change.