Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells
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| Published in: | Semiconductors (Woodbury, N.Y.) Vol. 31; no. 11; p. 1123 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-11-1997
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| Online Access: | Get full text |
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| ISSN: | 1063-7826 |
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| DOI: | 10.1134/1.1187278 |