Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C 60 -Based OFETs

Saved in:

Bibliographic Details
Published in:	ACS applied materials & interfaces Vol. 6; no. 17; pp. 15148 - 15153
Main Authors:	Ahmed, Rizwan, Kadashchuk, Andrey, Simbrunner, Clemens, Schwabegger, Günther, Baig, Muhammad Aslam, Sitter, Helmut
Format:	Journal Article
Language:	English
Published:	10-09-2014
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	1944-8244 1944-8252
DOI:	10.1021/am5032192