A study on quantum-sized Ag2O nanostructures: the effect of chemical interaction time before deposition using the CBD method

Ag2O quantum dots highly versatile promising a wide range of applications from energy conversion to biomedicine making them an important area of research and development in nanotechnology. The tunibilty of the bandgab, make them highly suitable for optoelectronics device, LED, solar cell, were the b...

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Bibliographic Details
Published in:Engineering and Technology Journal Vol. 42; no. 10; pp. 1277 - 1289
Main Authors: Evan Salim, Muntadher Awayiz, Makram Fakhri, Motahher Qaeed, Subash Gopinath
Format: Journal Article
Language:English
Published: Unviversity of Technology- Iraq 03-10-2024
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Summary:Ag2O quantum dots highly versatile promising a wide range of applications from energy conversion to biomedicine making them an important area of research and development in nanotechnology. The tunibilty of the bandgab, make them highly suitable for optoelectronics device, LED, solar cell, were the band gab can be adjested by controlling the size of nanoparticles leading to different light absorbtion and emission properties. In this work, uniform and smooth quantum-sized silver oxide (Ag2O) nano-films were chemically prepared on a glass substrate using chemical bath deposition method. The study investigated the impact of interaction time before the deposition process, where the effect of three priod of time (0.5, 1 and 1.5) hrs on physical properties have been invistigated. Structural analysis confirmed the cubic silver oxide (Ag2O) structure, corresponding to the primary diffraction plane (002). The optical results discuss the time dependency of the optical band gap, revealing an energy band gap of approximately 2.25 eV. The electrical conductivity initially shows an inverse relationship with time but increases after a certain point. Additional investigations were conducted on other properties, including electrical characteristics, Atomic Force Microscopy (AFM), and Scanning Electron Microscopy (SEM).
ISSN:1681-6900
2412-0758
DOI:10.30684/etj.2024.150834.1771