Determination of surface- and bulk-generation parameters from dark-current measurements in surface-channel CCD's

• Published in: IEEE transactions on electron devices Vol. 32; no. 9; pp. 1662 - 1664
• Main Authors: Chik, K.D., Kriegler, R.J., Devenyi, T.F.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-09-1985; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Charge transfer devices; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor device; Lifetime; Depletion mode; Minority carrier; Canal; Charge transfer device; Charge coupled device; Charge carrier generation; Measurement method; Surface
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1985.22176

A technique for determining surface-generation velocity and bulk minority-carrier generation lifetime from measurements in surface-channel charge-coupled devices (SCCD) is described. Depleted surface-generation velocity of 1.1 cm/s and bulk minority-carrier generation lifetime of 130 µs have been determined in the channel region for the devices used, and are in good agreement with data obtained by other techniques.