Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

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Bibliographic Details
Published in:Thin solid films Vol. 518; no. 6; pp. S62 - S64
Main Authors: Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi
Format: Journal Article
Language:English
Japanese
Published: 01-01-2010
Online Access:Get full text
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Description
ISSN:0040-6090
DOI:10.1016/j.tsf.2009.10.056