Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology

The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical charac...

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Bibliographic Details
Published in:	Journal of Telecommunications and Information Technology no. 3; pp. 3 - 8
Main Authors:	Bieniek, Tomasz, B. Beck, Romuald, Jakubowski, Andrzej, Głuszko, Grzegorz, Konarski, Piotr, Ćwil, Michał
Format:	Journal Article
Language:	English
Published:	National Institute of Telecommunications 01-06-2023
Subjects:	CMOS dual gate oxide gate stack oxynitride plasma implantation
Online Access:	Get full text
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Summary:	The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.3.819