0.34 \text} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

• Published in: IEEE electron device letters Vol. 36; no. 11; pp. 1132 - 1134
• Main Authors: Lee, Hyun-Soo, Jung, Dong Yun, Park, Youngrak, Jang, Hyun-Gyu, Lee, Hyoung-Seok, Jun, Chi-Hoon, Park, Junbo, Ryu, Sang-Ouk, Ko, Sang Choon, Nam, Eun Soo
• Format: Journal Article
• Language: English
• Published: IEEE 01-11-2015
• Subjects: AlGaN/GaN on Si; Aluminum gallium nitride; Anodes; Barriers; Channels; Devices; Diodes; Electric potential; Gallium nitride; Leakage current; low turn-on voltage; recess dual anode metal; Schottky barrier diode (SBD); Schottky barriers; Schottky diodes; Voltage; Wide band gap semiconductors; AlGaN/GaN on Si; low turn-on voltage; recess dual anode metal; Schottky barrier diode (SBD)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2015.2475178

A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm 2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-ON voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 μA/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.