Fast photoconductive detector using p -In0.53Ga0.47As with response to 1.7 μm

Photoconductive detectors, fabricated from p-type In0.53Ga0.47As using strip-line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This performance is consistent with a peak electron drift velocity of 2.1×107 cm/sec at a field of ∼3.5 kV/cm and represents the fastest reported detector...

Full description

Saved in:

Bibliographic Details
Published in:	Applied physics letters Vol. 38; no. 1; pp. 27 - 29
Main Authors:	Degani, J., Leheny, R. F., Nahory, R. E., Pollack, M. A., Heritage, J. P., DeWinter, J. C.
Format:	Journal Article
Language:	English
Published:	01-01-1981
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Photoconductive detectors, fabricated from p-type In0.53Ga0.47As using strip-line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This performance is consistent with a peak electron drift velocity of 2.1×107 cm/sec at a field of ∼3.5 kV/cm and represents the fastest reported detector response for the 1.0–1.7-μm wavelength range.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.92114